Research profile

10Research activity of Nanostructures and Nanodevices group is focused on the design, production and analysis of structures in nanoscale. The field of the research interests covers various physical phenomena like electronic band structure of photocatalytic semiconductors, recombination mechanism of charge carriers generated as a result of light absorption by nanomateirals, self-organisation of magneto-plasmonic nanoparticles, quantum confinement effects in nanostructures, spin phenomena, in particular at surfaces, magnetism at low dimensions and many others.

Nanostructures are obtained using vacuum technologies: magnetron sputtering, pulsed laser deposition (PLD), inert gas condensation technique (IGC) as well as using electrodeposition. Nanomaterials can be then further nanostructured in the clean room equipped with an electron beam lithography and ion etching.

We develop a technology of new metal-oxide and metal disulfide nanostructures for photocatalysis, bifunctional catalysis and gas sensors, mangetic memory cells (in particular, magnetic and spin-transfer-torque random access memories), spin logic nanostructures, micro- and nano-sensors of magnetic field (with sensitivity of femtoTesla) and of multiferroic nanostructures controlled by electric and magnetic fields, as well as electrochemical technology of functional nanowires for electronic, electrocatalysis and termoelectronic applications. 

Field of expertise

  • Deposition of metallic and non-metalic nanoparticles with precise particle size in the range of 5-20 nm, using IGC technique.
  • Production of core-shell nanoclusters.
  • Deposition of composite thin films of metals and metal oxides with precise thickness and chemical composition. Thin films of oxides or nitrides are possible to obtain by adding a small amount of a reactive gas (O2, N2).
  • Preparation of thin films and multilayer structures of ceramic, polymer and composite materials on square-shape (1x1 cm2) and disk (up to 4 inches in diameter) substrates, also in presence of noble or reactive gases; maximum substrate temperature 850 °C.
  • Reflection high energy electron diffraction (RHEED) for non-destructive analysis of surfaces and for in situ monitoring of thin-film growth and multilayer structures.
  • Fabrication of nanoporous alumina with different pore architecture by electrochemical anodization of aluminum in acidic electrolytes.
  • Fabrication of metallic, semiconducting, polymeric and hybrid nanowires with straight, y-shaped and modulated geometry via electrodeposition.
  • Fabrication of porous nanowires via template-assisted electrodeposition and selective dealloying.
  • Preparation of nanodevices by the electron beam lithography process with the minimal size of nanoelement - 10 nm.
  • Preparation of microelectrodes with up to mm sizes via optical lithography. Technique resolution 1 μm.
  • Reactive ion etching (Ar gun) of thin layers with deep profile. Qualitative analysis is possible through the use of a SIMS (Secondary Ion Mass Spectrometry) detector.
  • Sputtering of metallic contact layer (Al, Cr, Au) or dielectric layer (Al2O3).

Head of the group

  • prof. dr hab. inż. Marek Przybylski

Group members

  • Dr  Katarzyna Hnida
  • Dr  Kamila Kollbek
  • Dr  Antonii Żywczak
  • Łukasz Jarosiński
  • Jakub Pawlak
  • Grzegorz Szwachta